High density plasma etcher

High density plasma etcher

SKU:PREE-BIR2010 / BI2R2010

  • High density plasma source (ICP) achieves high etching rate.
  • The Loadlock design effectively stabilizes the process environment and prevents personnel from coming into contact with harmful gases.
  • 8 inch carrier provides flexible placement of small size test pieces.
  • Special carrier design can reduce particle pollution.
  • Requirements for passivation, oxide, nitride, silicon carbide, silicon etching, and carbon cleaning processes can be met.
  • High density plasma with high efficiency vacuum system design (Loadlock) to gain higher throughput.

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